CHT4126WPT c h e n m k o e n t e r p r i s e c o . , l t d surface mount general purpose transistor a p p l i c a t i o n f e a t u r e * h i g h c u r r e n t g a i n . * s u i t a b l e f o r h i g h p a c k i n g d e n s i t y . construction * a f i n p u t s t a g e s a n d d r i v e r a p p l i c a t i o n o n e q u i p m e n t . * o t h e r g e n e r a l p u r p o s e a p p l i c a t i o n s . 2004-8 * l o w c o l l o e c t o r - e m i t t e r s a t u r a t i o n . * h i g h s a t u r a t i o n c u r r e n t c a p a b i l i t y . voltage 25 volts current 200 mampere limiting v alues in accordance with the absolute maxim um rating system (iec 60134). note 2. transistor mounted on an fr4 printed-circuit board. symbol p arameter conditions min. max. unit v cbo collector-base v oltage open emitter - -25 v v ceo collector-emitter v oltage open base - -25 v v ebo emitter-base v oltage open collector - -4 i c collector current (dc) - -200 ma p tot total po w er dissipation t amb 25 c; note 2 - 300 mw t stg stor age temper ature - 65 +150 c t j junction temper ature - 150 c t amb oper ating ambient temper ature - 65 +150 c v (1) (2) (3) * pnp silicon transistor c i r c u i t e c b * small surface mounting type. (sc-70/sot-323) sc-70/sot-323 marking * dw d i m e n s i o n s i n m i l l i m e t e r s s c - 7 0 / s o t - 3 2 3 (1) (2) ( 3 ) 0 . 6 5 0 . 6 5 1 . 3 0 . 1 2 . 0 0 . 2 0 . 8~1.1 0 . 3 0 . 1 0 . 05~0.2 0 ~ 0 . 1 1 . 2 5 0 . 1 2 . 0~2.45 0 . 1 m i n .
r a t i n g c h a r a c t e r i s t i c c u r v e s ( c h 8 5 7 s ) t y p i c a l p u l s e d c u r r e n t g a i n v s c o l l e c t o r c u r r e n t 0 . 0 1 0 . 1 1 1 0 1 0 0 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 i - c o l l e c t o r c u r r e n t ( m a ) h - t y p i c a l p u l s e d c u r r e n t g a i n c f e 1 2 5 c 2 5 c - 4 0 c v = 5 v c e c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e v s c o l l e c t o r c u r r e n t 0 . 1 1 1 0 1 0 0 3 0 0 0 0 . 0 5 0 . 1 0 . 1 5 0 . 2 0 . 2 5 0 . 3 i - c o l l e c t o r c u r r e n t ( m a ) v - c o l l e c t o r e m i t t e r v o l t a g e ( v ) c c e s a t 2 5 c - 4 0 c 1 2 5 c b = 1 0 note 3. pulse test: t p 300 m s; d 0.02. chara cteristics i t amb =2 5 c unless otherwise specited. symbol p arameter conditions min. max. unit i cbo collector cut-off current i e = 0; v cb = -20 v - -50 na i ebo emitter cut-off current i c = 0; v eb =-3v - -50 na h fe dc current gain i c = -50 ma; v ce = -1v; note 3 60 - i c = -2 ma; v ce = -1v 120 360 v cesat collector-emitter saturation i c = -50 ma; i b = -5 ma - -400 mv v besat base-emitter saturation voltage i c = -50 ma; i b = -5 ma c obo output capacitance i e =i e = 0; v cb =-5v ; f=1m h z - 4.5 pf f t tr ansition frequency c i ibo c i = e =i -10 e ma; v = ce 0; v =- cb 20v =-5v ; ; f f=1m = h 100 z mhz - 250 10 - pf mhz v (br)cbo v (br)ceo v (br)ebo collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage h fe dc current gain input capacitance i c = -10 ua ; i e = 0a i c = -1ma ; i b = 0a i e = -10 ua ; i c = 0a -25 -25 -4 - v - v - v - -950 mv rating characteristic curves ( CHT4126WPT )
rating characteristic curves ( cht4126w pt ) typical characteristics ty pical pulsed current gain vs collector current 0. 1 0. 2 0. 5 1 2 5 10 20 50 1 00 50 100 150 200 250 i - collector curre nt (ma) h - typical pulsed cu rrent gain c fe 125 c 25 c - 40 c v = 1 .0 v ce coll ector -em itt er sa tur ati on voltage vs coll ect or cur re nt 11 01 0 0 2 0 0 0 0.05 0. 1 0.15 0. 2 0.25 0. 3 i - collector current (ma) v - collector emitter voltage (v) c cesat 25 c - 40 c 125 c = 10 bas e-emitt er saturation voltage vs collect or curre nt 11 01 0 0 2 0 0 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - base emitter voltage (v) c besat = 10 25 c - 40 c 125 c bas e e mi tter o n voltage vs collector current 0.1 1 10 25 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - base emitter on voltage (v) c be( on) v = 1v ce 25 c - 40 c 125 c common-base open circuit input and output capacitance vs reverse bias voltage 0.1 1 10 0 2 4 6 8 10 reverse bias voltage (v) capacitance (pf) c obo c ibo collector-cutoff current vs ambient temperature 25 50 75 100 125 0.01 0. 1 1 10 10 0 t - a mbi e nt t emp er at ur e ( c) i - c ol le ct o r cu rr en t (n a) a cbo v = 25v cb
typical characteristics rating characteristic curves ( cht4126w pt ) noise figure vs frequency 0.1 1 10 100 0 1 2 3 4 5 6 f - frequency (khz) nf - noise figure (db) i = 100 a, r = 2 00 ? c v = 5.0v ce s i = 100 a, r = 2.0 k ? c s i = 1.0 ma, r = 200 ? c s noise figure vs source resistance 0.1 1 10 100 0 2 4 6 8 10 12 r - source resistance ( ) nf - noise figure (db) k ? i = 100 a c v = 5.0v f = 1.0 khz ce i = 1.0 ma c s switching times vs collector current 1 10 100 1 10 100 500 i - collector current (ma) time (ns) i = i = t r t s b1 c b2 i c 10 t f t d turn on and turn off times vs collector current 1 10 100 1 10 100 500 i - collector current (ma) time (ns) i = i = t off b1 b2 i c 10 t on v = 0.5v be(off) t i = on t off b1 i c 10 output admittance 0.1 1 10 10 100 1000 i - collector current (ma) h - output admittance ( mhos) v = 10 v ce c oe f = 1.0 khz current gain 0.1 1 10 10 20 50 100 200 500 1000 i - collector current (ma) h - current gain v = 10 v ce c fe f = 1.0 khz
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